Back gating of a two-dimensional hole gas in a SiGe quantum well
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چکیده
منابع مشابه
Cubic Rashba spin-orbit interaction of a two-dimensional hole gas in a strained-Ge/SiGe quantum well.
The spin-orbit interaction (SOI) of a two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observe weak antilocalization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrate electric field control of the Rashba S...
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We report in this Letter our recent low-temperature transport results in a Si/SiGe quantum well with moderate peak mobility. An apparent metal-insulating transition is observed. Within a small range of densities near the transition, the conductivity σ displays a nonmonotonic temperature dependence. After an initial decrease at high temperatures, σ first increases with decreasing temperature T, ...
متن کاملWigner-crystal states for the two-dimensional electron gas in a double-quantum-well system.
Using the Hartree-Fock approximation, we calculate the energy of different Wigner crystal states for the two-dimensional electron gas of a double quantum well system in a strong magnetic field. Our calculation takes interlayer hopping as well as an in-plane magnetic field into consideration. The ground state at small layer separations is a one-component triangular lattice Wigner state. As the l...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1997
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.118729